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Accurate indoor localization is crucial for enabling spatial context in smart environments and navigation systems. Wi-Fi Received Signal Strength (RSS) fingerprinting is a widely used indoor localization approach due to its compatibility with mobile embedded devices. Deep Learning (DL) models improve accuracy in localization tasks by learning RSS variations across locations, but they assume fingerprint vectors exist in a Euclidean space, failing to incorporate spatial relationships and the non-uniform distribution of real-world RSS noise. This results in poor generalization across heterogeneous mobile devices, where variations in hardware and signal processing distort RSS readings. Graph Neural Networks (GNNs) can improve upon conventional DL models by encoding indoor locations as nodes and modeling their spatial and signal relationships as edges. However, GNNs struggle with non-Euclidean noise distributions and suffer from the GNN blind spot problem, leading to degraded accuracy in environments with dense access points (APs). To address these challenges, we propose GATE, a novel framework that constructs an adaptive graph representation of fingerprint vectors while preserving an indoor state-space topology, modeling the non-Euclidean structure of RSS noise to mitigate environmental noise and address device heterogeneity. GATE introduces (1) a novel Attention Hyperspace Vector (AHV) for enhanced message passing, (2) a novel Multi-Dimensional Hyperspace Vector (MDHV) to mitigate the GNN blind spot, and (3) a new Real-Time Edge Construction (RTEC) approach for dynamic graph adaptation. Extensive real-world evaluations across multiple indoor spaces with varying path lengths, AP densities, and heterogeneous devices demonstrate that GATE achieves 1.6 × to 4.72 × lower mean localization errors and 1.85 × to 4.57 × lower worst-case errors compared with state-of-the-art indoor localization frameworks. 

Instant data deletion (or sanitization) in NAND flash devices is essential for achieving data privacy, but it remains challenging due to the mismatch between erase and write granularities, which leads to high overhead and accelerated wear. While page-overwrite-based instant data sanitization has proven effective for 2D NAND, its applicability to 3D NAND is limited due to the unique sub-block architecture. In this study, we experimentally evaluate page-overwrite-based sanitization on commercial 3D NAND flash memory chips and uncover significant threshold voltage disturbances in erased cells on adjacent pages within the same layer but across different sub-blocks. Our key findings reveal that page-overwrite sanitization increases the median raw bit error rate (RBER) beyond correction limits (exceeding 0.93%) in Floating-Gate (FG) Single-Level Cell (SLC) technology, whereas Charge-Trap (CT) SLC 3D NAND flash memories exhibit higher robustness. In Triple-Level Cell (TLC) 3D NAND, page-overwrite sanitization proves impractical, with the median RBER of ∼13% for FG and ∼5% for CT devices. To overcome these challenges, we proposePULSE, a low-disturbance sanitization technique that balances sanitization efficiency ({{\eta }_{san}}) and data integrity (RBER). Experimental results show that PULSE eliminates RBER increases in SLC devices and reduces the median RBER to below 0.57% for FG and 0.79% for CT in fresh TLC blocks, demonstrating its practical viability for 3D NAND flash sanitization. 

This article explores the reliability, security, and sustainability of future 3D NAND flash SSDs. We discuss scaling challenges, their impact on reliability and radiation-induced vulnerabilities, along with potential countermeasures. Security concerns, including data sanitization and supply chain risks, are also discussed. Finally, we highlight sustainability issues related to storage carbon footprints. Our article emphasizes the need for innovative solutions to improve the resilience, security, and environmental impact of 3D NAND technology.